BSP318SL6327HTSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 60V 2.6A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
на замовлення 2793000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1385+ | 15.06 грн |
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Технічний опис BSP318SL6327HTSA1 Infineon Technologies
Description: MOSFET N-CH 60V 2.6A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: PG-SOT223-4-21, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V.
Інші пропозиції BSP318SL6327HTSA1 за ціною від 18.39 грн до 18.39 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
| BSP318SL6327HTSA1 | Виробник : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BSP318SL6327HTSA1 - BSP318 SIPS SMALL-SIGNAL N-CHANNEL tariffCode: 85412100 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
на замовлення 2793000 шт: термін постачання 21-31 дні (днів) |
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BSP318SL6327HTSA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R |
товару немає в наявності |
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BSP318SL6327HTSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 2.6A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-SOT223-4-21 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V |
товару немає в наявності |
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BSP318SL6327HTSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 2.6A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-SOT223-4-21 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V |
товару немає в наявності |