Технічний опис BSM75GB170DN2HOSA1 Infineon Technologies
Description: IGBT MOD 1700V 110A 625W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 625 W, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V.
Інші пропозиції BSM75GB170DN2HOSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BSM75GB170DN2HOSA1 | Виробник : Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 625 W Input Capacitance (Cies) @ Vce: 11 nF @ 25 V |
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