Технічний опис BSM50GD120DLCBOSA1 Infineon Technologies
Description: IGBT MOD 1200V 85A 350W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 84 µA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.
Інші пропозиції BSM50GD120DLCBOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BSM50GD120DLCBOSA1 | Виробник : Infineon Technologies |
 Trans IGBT Module N-CH |
товар відсутній |
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| BSM50GD120DLCBOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 85A 350W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A NTC Thermistor: No Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 84 µA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
товар відсутній |