Технічний опис BSM 50GD120 DN2 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT three-phase bridge, Max. off-state voltage: 1.2kV, Collector current: 50A, Case: ECONOPACK 2K, Application: Inverter, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 100A, Power dissipation: 350W, Mechanical mounting: screw.
Інші пропозиції BSM 50GD120 DN2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BSM50GD120DN2 | Виробник : Infineon Technologies |
 IGBT Modules 1200V 50A FL BRIDGE |
товар відсутній |
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BSM50GD120DN2 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: ECONOPACK 2K Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 350W Mechanical mounting: screw |
товар відсутній |