BSF050N03LQ3GXUMA1

BSF050N03LQ3GXUMA1 Infineon Technologies


bsf050n03lq3_g_rev2.0.pdffolderiddb3a304313b8b5a60113cee8763b02d7fileiddb3a304320d39d590121a0f5.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 15A 6-Pin WDSON T/R
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Description: MOSFET N-CH 30V 15A/60A 2WDSON, Packaging: Tape & Reel (TR), Package / Case: 3-WDSON, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 2.2W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: MG-WDSON-2, CanPAK M™, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V.

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BSF050N03LQ3GXUMA1 BSF050N03LQ3GXUMA1 Виробник : Infineon Technologies BSF050N03LQ3-G.pdf Description: MOSFET N-CH 30V 15A/60A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
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