BSC119N03SG INF

Description: MOSFET N-CH 30V 11.9A/30A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 11.9mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: PG-TDSON-8-1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V.