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BSC105N10LSFGATMA1 Infineon Technologies

Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R

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Технічний опис BSC105N10LSFGATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 11.4/90A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 90A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 110µA, Supplier Device Package: PG-TDSON-8-1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 50 V.

Інші пропозиції BSC105N10LSFGATMA1

Назва	Виробник	Інформація	Доступність
BSC105N10LSFGATMA1	Виробник : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; PG-TDSON-8 Drain-source voltage: 100V Drain current: 90A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 кількість в упаковці: 5000 шт	товар відсутній
BSC105N10LSFGATMA1	Виробник : Infineon Technologies	Description: MOSFET N-CH 100V 11.4/90A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 110µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 50 V	товар відсутній
BSC105N10LSFGATMA1	Виробник : Infineon Technologies	Description: MOSFET N-CH 100V 11.4/90A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 110µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 50 V	товар відсутній
BSC105N10LSFGATMA1	Виробник : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; PG-TDSON-8 Drain-source voltage: 100V Drain current: 90A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8	товар відсутній