Технічний опис BQ4015LYMA-70N TI
Description: IC NVSRAM 4MBIT PAR 32DIP MODULE, Packaging: Tube, Package / Case: 32-DIP Module (0.610", 15.49mm), Mounting Type: Through Hole, Memory Size: 4Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: NVSRAM (Non-Volatile SRAM), Memory Format: NVSRAM, Supplier Device Package: 32-DIP Module (18.42x42.8), Write Cycle Time - Word, Page: 70ns, Memory Interface: Parallel, Access Time: 70 ns, Memory Organization: 512K x 8, DigiKey Programmable: Not Verified.
Інші пропозиції BQ4015LYMA-70N
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BQ4015LYMA-70N | Виробник : Texas Instruments |
 NVRAM NVSRAM Parallel 4Mbit 3.3V 32-Pin DIP Module |
товар відсутній |
||
 |
BQ4015LYMA-70N | Виробник : Texas Instruments |
Description: IC NVSRAM 4MBIT PAR 32DIP MODULE Packaging: Tube Package / Case: 32-DIP Module (0.610", 15.49mm) Mounting Type: Through Hole Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 32-DIP Module (18.42x42.8) Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
товар відсутній |