Технічний опис BFR31,215 NXP Semiconductors
Description: JFET N-CH 10MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V, Current Drain (Id) - Max: 10 mA, Supplier Device Package: SOT-23 (TO-236AB), Drain to Source Voltage (Vdss): 25 V, Power - Max: 250 mW, Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 0.5 nA, Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 10 V.
Інші пропозиції BFR31,215
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BFR31,215 | Виробник : NXP USA Inc. |
 Description: JFET N-CH 10MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Current Drain (Id) - Max: 10 mA Supplier Device Package: SOT-23 (TO-236AB) Drain to Source Voltage (Vdss): 25 V Power - Max: 250 mW Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 0.5 nA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 10 V |
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BFR31,215 | Виробник : NXP USA Inc. |
Description: JFET N-CH 10MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Current Drain (Id) - Max: 10 mA Supplier Device Package: SOT-23 (TO-236AB) Drain to Source Voltage (Vdss): 25 V Power - Max: 250 mW Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 0.5 nA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 10 V |
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