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BFP460E6327HTSA1 Infineon Technologies
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Description: RF TRANS NPN 5.8V 22GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 26.5dB
Power - Max: 230mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 5.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Obsolete
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Технічний опис BFP460E6327HTSA1 Infineon Technologies
Description: RF TRANS NPN 5.8V 22GHZ SOT343-4, Packaging: Tape & Reel (TR), Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 12.5dB ~ 26.5dB, Power - Max: 230mW, Current - Collector (Ic) (Max): 70mA, Voltage - Collector Emitter Breakdown (Max): 5.8V, DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V, Frequency - Transition: 22GHz, Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz, Supplier Device Package: PG-SOT343-4-2, Part Status: Obsolete.
Інші пропозиції BFP460E6327HTSA1
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BFP460E6327HTSA1 | Виробник : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12.5dB ~ 26.5dB Power - Max: 230mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 5.8V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz Supplier Device Package: PG-SOT343-4-2 Part Status: Obsolete |
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