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BDV64B onsemi
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Description: TRANS PNP DARL 100V 10A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: SOT-93
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
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Технічний опис BDV64B onsemi
Description: TRANS PNP DARL 100V 10A SOT93, Packaging: Tube, Package / Case: TO-218-3, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V, Supplier Device Package: SOT-93, Part Status: Obsolete, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 125 W.
Інші пропозиції BDV64B
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BDV64B | Виробник : Central Semiconductor Corp |
![]() Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Frequency - Transition: 60MHz Supplier Device Package: TO-218 Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 125 W |
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BDV64B | Виробник : Bourns |
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BDV64B | Виробник : onsemi |
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BDV64B | Виробник : Central Semiconductor |
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