BCR162E6327HTSA1

BCR162E6327HTSA1 Infineon Technologies


bcr162series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402b1a4b02cf Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 448200 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7397+2.84 грн
Мінімальне замовлення: 7397
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Технічний опис BCR162E6327HTSA1 Infineon Technologies

Description: TRANS PREBIAS PNP 50V SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V, Supplier Device Package: PG-SOT23, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.

Інші пропозиції BCR162E6327HTSA1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
BCR162E6327HTSA1 Виробник : ROCHESTER ELECTRONICS SIEMD095-683.pdf?t.download=true&u=5oefqw Description: ROCHESTER ELECTRONICS - BCR162E6327HTSA1 - BCR162 - DIGITAL TRANSISTOR
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
на замовлення 583 шт:
термін постачання 21-31 дні (днів)
BCR162E6327HTSA1 BCR162E6327HTSA1 Виробник : Infineon Technologies bcr162.pdf Trans Digital BJT PNP 50V 100mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R
товар відсутній
BCR162E6327HTSA1 BCR162E6327HTSA1 Виробник : Infineon Technologies bcr162.pdf Trans Digital BJT PNP 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R
товар відсутній
BCR162E6327HTSA1 BCR162E6327HTSA1 Виробник : Infineon Technologies bcr162series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402b1a4b02cf Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
товар відсутній
BCR162E6327HTSA1 BCR162E6327HTSA1 Виробник : Infineon Technologies Infineon-BCR162-DS-v01_01-en-1226123.pdf Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
товар відсутній