BC807-40QA,147 NXP
Виробник: NXPDescription: NXP - BC807-40QA,147 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)
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Технічний опис BC807-40QA,147 NXP
Description: NOW NEXPERIA BC807-40 - SMALL SI, Packaging: Bulk, Part Status: Active, Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V, Frequency - Transition: 80MHz, Supplier Device Package: DFN1010D-3, Grade: Automotive, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 900 mW, Qualification: AEC-Q101.
Інші пропозиції BC807-40QA,147
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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BC807-40QA,147 | Виробник : NXP USA Inc. |
Description: NOW NEXPERIA BC807-40 - SMALL SI Packaging: Bulk Part Status: Active Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Frequency - Transition: 80MHz Supplier Device Package: DFN1010D-3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 900 mW Qualification: AEC-Q101 |
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