BC856S E6327 ROCHESTER ELECTRONICS
Виробник: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - BC856S E6327 - BC856 - GENERAL PURPOSE TRANSISTOR
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
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Технічний опис BC856S E6327 ROCHESTER ELECTRONICS
Description: BIPOLAR GEN PURPOSE TRANSISTOR, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: SOT-363, Part Status: Active.
Інші пропозиції BC856S E6327
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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BC 856S E6327 | Виробник : Infineon Technologies |
Trans GP BJT PNP 65V 0.1A 250mW Automotive 6-Pin SOT-363 T/R |
товар відсутній |
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| BC856S E6327 | Виробник : Infineon Technologies |
Description: BIPOLAR GEN PURPOSE TRANSISTOR Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: SOT-363 Part Status: Active |
товар відсутній |