BAP55L,315 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF DIODE PIN 50V 500MW DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: DFN1006-2
Current - Max: 100 mA
Power Dissipation (Max): 500 mW
Description: RF DIODE PIN 50V 500MW DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: DFN1006-2
Current - Max: 100 mA
Power Dissipation (Max): 500 mW
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Технічний опис BAP55L,315 NXP USA Inc.
Description: RF DIODE PIN 50V 500MW DFN1006-2, Packaging: Tape & Reel (TR), Package / Case: SOD-882, Diode Type: PIN - Single, Operating Temperature: -65°C ~ 150°C (TJ), Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz, Resistance @ If, F: 700mOhm @ 100mA, 100MHz, Voltage - Peak Reverse (Max): 50V, Supplier Device Package: DFN1006-2, Current - Max: 100 mA, Power Dissipation (Max): 500 mW.
Інші пропозиції BAP55L,315
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BAP55L,315 | Виробник : NXP USA Inc. |
Description: RF DIODE PIN 50V 500MW DFN1006-2 Packaging: Cut Tape (CT) Package / Case: SOD-882 Diode Type: PIN - Single Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz Resistance @ If, F: 700mOhm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: DFN1006-2 Current - Max: 100 mA Power Dissipation (Max): 500 mW |
товар відсутній |
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BAP55L,315 | Виробник : NXP Semiconductors | PIN Diodes BAP55L/SOD882/REELP2// |
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