AUIRFR8403TRLARMA1 Infineon Technologies


infineon-auirfr8403-ds-v01_01-en.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH Si 40V 127A Automotive 3-Pin(2+Tab) DPAK
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Технічний опис AUIRFR8403TRLARMA1 Infineon Technologies

Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V, Power Dissipation (Max): 99W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Supplier Device Package: PG-TO252-3-901|DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V.

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AUIRFR8403TRLARMA1 Виробник : Infineon Technologies Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO252-3-901|DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
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AUIRFR8403TRLARMA1 Виробник : Infineon Technologies MOSFETs N
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