AUIRFR120ZTRL

AUIRFR120ZTRL Infineon Technologies


2069840497834769auirfr120z.pdffileid5546d462533600a4015355b1f71f1460.pdffileid554.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH Si 100V 8.7A Automotive 3-Pin(2+Tab) DPAK T/R
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Технічний опис AUIRFR120ZTRL Infineon Technologies

Description: MOSFET N-CH 100V 8.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 25µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V.

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AUIRFR120ZTRL AUIRFR120ZTRL Виробник : Infineon Technologies AUIRF%28R%2CU%29120Z.pdf Description: MOSFET N-CH 100V 8.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
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AUIRFR120ZTRL AUIRFR120ZTRL Виробник : Infineon Technologies Infineon-AUIRFR120Z-DS-v01_02-EN-1225811.pdf MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms
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