AUIRFP4310Z

AUIRFP4310Z Infineon Technologies


6252auirfp4310z.pdffileid5546d462533600a4015355b1c8291454.pdffileid55.pdf Виробник: Infineon Technologies
HEXFET Power MOSFET
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Технічний опис AUIRFP4310Z Infineon Technologies

Description: MOSFET N-CH 100V 128A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 128A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 77A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: PG-TO247-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7120 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

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AUIRFP4310Z AUIRFP4310Z Виробник : Infineon Technologies AUIRFP4310Z.pdf Description: MOSFET N-CH 100V 128A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 77A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7120 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRFP4310Z AUIRFP4310Z Виробник : Infineon Technologies infn_s_a0002298988_1-2271106.pdf MOSFETs N-CHANNEL 75 / 80
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