Технічний опис AUIRF7309Q Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, 3A, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Інші пропозиції AUIRF7309Q
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AUIRF7309Q | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
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