Технічний опис AUIRF7103Q Infineon Technologies
Description: MOSFET 2N-CH 50V 3A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W, Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V, Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Інші пропозиції AUIRF7103Q
Фото | Назва | Виробник | Інформація |
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AUIRF7103Q | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 50V 3A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
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AUIRF7103Q | Виробник : Infineon Technologies | MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms |
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AUIRF7103Q | Виробник : INTERNATIONAL RECTIFIER |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 3A Power: 2.4W Case: SO8 |
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