Технічний опис ATP112-TL-H ON Semiconductor
Description: MOSFET P-CH 60V 25A ATPAK, Packaging: Tape & Reel (TR), Package / Case: ATPAK (2 leads+tab), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V, Power Dissipation (Max): 40W (Tc), Supplier Device Package: ATPAK, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V.
Інші пропозиції ATP112-TL-H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
ATP112-TL-H | Виробник : ON Semiconductor |
 Trans MOSFET P-CH Si 60V 25A 3-Pin(2+Tab) ATPAK T/R |
товару немає в наявності |
|
| ATP112-TL-H | Виробник : ONSEMI | ATP112-TL-H SMD P channel transistors |
товару немає в наявності |
||
 |
ATP112-TL-H | Виробник : onsemi |
Description: MOSFET P-CH 60V 25A ATPAK Packaging: Tape & Reel (TR) Package / Case: ATPAK (2 leads+tab) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V Power Dissipation (Max): 40W (Tc) Supplier Device Package: ATPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V |
товару немає в наявності |
|
|
|
ATP112-TL-H | Виробник : onsemi |
Description: MOSFET P-CH 60V 25A ATPAK Packaging: Cut Tape (CT) Package / Case: ATPAK (2 leads+tab) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V Power Dissipation (Max): 40W (Tc) Supplier Device Package: ATPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V |
товару немає в наявності |