Технічний опис AS4C2M32S-6BINTR Alliance Memory
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 2Mx32bit; 3.3V; 166MHz; 5.4ns; TFBGA90; -40÷85°C, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory organisation: 2Mx32bit, Clock frequency: 166MHz, Access time: 5.4ns, Case: TFBGA90, Memory capacity: 64Mb, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: reel, Operating voltage: 3.3V.
Інші пропозиції AS4C2M32S-6BINTR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| AS4C2M32S-6BINTR | Виробник : ALLIANCE MEMORY |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2Mx32bit; 3.3V; 166MHz; 5.4ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx32bit Clock frequency: 166MHz Access time: 5.4ns Case: TFBGA90 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C2M32S-6BINTR | Виробник : Alliance Memory, Inc. |
Description: IC SDRAM 64M 2MX32 90BGA |
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| AS4C2M32S-6BINTR | Виробник : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx32bit; 3.3V; 166MHz; 5.4ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx32bit Clock frequency: 166MHz Access time: 5.4ns Case: TFBGA90 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
товар відсутній |