Технічний опис APTM100AM90FG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW, Type of module: MOSFET transistor, Mechanical mounting: screw, Pulsed drain current: 312A, Semiconductor structure: transistor/transistor, Drain-source voltage: 1kV, Drain current: 59A, On-state resistance: 0.105Ω, Power dissipation: 1.25kW, Electrical mounting: FASTON connectors; screw, Technology: FREDFET; POWER MOS 7®, Gate-source voltage: ±30V, Topology: MOSFET half-bridge, Case: SP6C, кількість в упаковці: 1 шт.
Інші пропозиції APTM100AM90FG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| APTM100AM90FG | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 312A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 59A On-state resistance: 0.105Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Case: SP6C кількість в упаковці: 1 шт |
товару немає в наявності |
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APTM100AM90FG | Виробник : Microchip Technology |
Description: MOSFET 2N-CH 1000V 78A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 78A Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 |
товару немає в наявності |
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| APTM100AM90FG | Виробник : Microchip / Microsemi |
Discrete Semiconductor Modules CC6067 |
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| APTM100AM90FG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 312A Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 59A On-state resistance: 0.105Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Case: SP6C |
товару немає в наявності |