APTGTQ100A65T1G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A
Application: motors
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: IGBT half-bridge; NTC thermistor
Collector current: 60A
кількість в упаковці: 15 шт
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Технічний опис APTGTQ100A65T1G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 650V 100A 250W SP1, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP1, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 6 nF @ 25 V.
Інші пропозиції APTGTQ100A65T1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| APTGTQ100A65T1G | Виробник : Microchip Technology |
Description: IGBT MODULE 650V 100A 250W SP1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP1 Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 6 nF @ 25 V |
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APTGTQ100A65T1G | Виробник : Microchip Technology |
IGBT Modules CC8125 |
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| APTGTQ100A65T1G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A Application: motors Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT half-bridge; NTC thermistor Collector current: 60A |
товар відсутній |