Технічний опис APTGT75TDU60PG Microchip Technology
Description: IGBT MODULE 600V 100A 250W SP6P, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Triple, Dual - Common Source, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: SP6-P, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V.
Інші пропозиції APTGT75TDU60PG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT75TDU60PG | Виробник : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Technology: Field Stop; Trench Collector current: 75A Case: SP6P Gate-emitter voltage: ±20V Pulsed collector current: 140A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Topology: IGBT x6 Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 7 шт |
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| APTGT75TDU60PG | Виробник : Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP6P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
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| APTGT75TDU60PG | Виробник : Microchip Technology |
IGBT Modules DOR CC6525 |
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| APTGT75TDU60PG | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Technology: Field Stop; Trench Collector current: 75A Case: SP6P Gate-emitter voltage: ±20V Pulsed collector current: 140A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Topology: IGBT x6 Mechanical mounting: screw Type of module: IGBT |
товар відсутній |