Технічний опис APTGT35DA120D1G APT
Description: IGBT MODULE 1200V 55A 205W D1, Packaging: Bulk, Package / Case: D1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A, NTC Thermistor: No, Supplier Device Package: D1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 205 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V.
Інші пропозиції APTGT35DA120D1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT35DA120D1G | Виробник : Microsemi Corporation |
 Description: IGBT MODULE 1200V 55A 205W D1Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A NTC Thermistor: No Supplier Device Package: D1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 205 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
товар відсутній |