Технічний опис APTGT30DA170D1G APT
Description: IGBT MODULE 1700V 45A 210W D1, Packaging: Bulk, Package / Case: D1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, NTC Thermistor: No, Supplier Device Package: D1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 210 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V.
Інші пропозиції APTGT30DA170D1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT30DA170D1G | Виробник : Microsemi Corporation |
 Description: IGBT MODULE 1700V 45A 210W D1Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A NTC Thermistor: No Supplier Device Package: D1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 210 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
товар відсутній |