APTGT225A170G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Technology: Field Stop; Trench
Collector current: 225A
Case: SP6C
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Application: motors
Electrical mounting: FASTON connectors; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 4 шт
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Технічний опис APTGT225A170G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A, Technology: Field Stop; Trench, Collector current: 225A, Case: SP6C, Gate-emitter voltage: ±20V, Pulsed collector current: 450A, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.7kV, Application: motors, Electrical mounting: FASTON connectors; screw, Topology: IGBT half-bridge, Mechanical mounting: screw, Type of module: IGBT, кількість в упаковці: 4 шт.
Інші пропозиції APTGT225A170G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT225A170G | Виробник : Microsemi Power Products Group |
Description: IGBT MODULE TRENCH PHASE LEG SP6 |
товар відсутній |
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| APTGT225A170G | Виробник : Microsemi |
IGBT Modules Power Module - IGBT |
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| APTGT225A170G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Technology: Field Stop; Trench Collector current: 225A Case: SP6C Gate-emitter voltage: ±20V Pulsed collector current: 450A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Application: motors Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT |
товар відсутній |