Технічний опис APTGLQ200H65G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 650V 270A 680W SP6, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 270 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 680 W, Current - Collector Cutoff (Max): 75 µA, Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V.
Інші пропозиції APTGLQ200H65G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGLQ200H65G | Виробник : Microchip Technology |
Description: IGBT MODULE 650V 270A 680W SP6 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 270 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 680 W Current - Collector Cutoff (Max): 75 µA Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V |
товару немає в наявності |
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APTGLQ200H65G | Виробник : Microchip / Microsemi | IGBT Modules DOR HOLD CC6254 |
товару немає в наявності |