APTGL475A120D3G MICROCHIP (MICROSEMI)
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Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 475A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: D3
Application: motors
Technology: Field Stop; Trench
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of module: IGBT
Collector current: 475A
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
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Технічний опис APTGL475A120D3G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 475A, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Case: D3, Application: motors, Technology: Field Stop; Trench, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Topology: IGBT half-bridge, Type of module: IGBT, Collector current: 475A, Gate-emitter voltage: ±20V, Pulsed collector current: 900A.
Інші пропозиції APTGL475A120D3G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGL475A120D3G | Виробник : MICROSEMI |
![]() кількість в упаковці: 1 шт |
товар відсутній |
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APTGL475A120D3G | Виробник : Microchip Technology |
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товар відсутній |
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APTGL475A120D3G | Виробник : Microchip Technology |
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товар відсутній |
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APTGL475A120D3G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 475A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: D3 Application: motors Technology: Field Stop; Trench Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: IGBT half-bridge Type of module: IGBT Collector current: 475A Gate-emitter voltage: ±20V Pulsed collector current: 900A |
товар відсутній |