APTCV60TLM70T3G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB
Pulsed drain current: 160A
Power dissipation: 250W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 29A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 70mΩ
Collector current: 50A
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB
Pulsed drain current: 160A
Power dissipation: 250W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 29A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 70mΩ
Collector current: 50A
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
кількість в упаковці: 1 шт
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Технічний опис APTCV60TLM70T3G MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB, Pulsed drain current: 160A, Power dissipation: 250W, Technology: Field Stop; SJ-MOSFET; Trench, Drain current: 29A, Drain-source voltage: 600V, Mechanical mounting: screw, Electrical mounting: Press-in PCB, Type of module: MOSFET/IGBT transistor, Semiconductor structure: diode/transistor, Case: SP3, On-state resistance: 70mΩ, Collector current: 50A, Gate-source voltage: ±20V, Topology: NTC thermistor; three-level inverter; single-phase, кількість в упаковці: 1 шт.
Інші пропозиції APTCV60TLM70T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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APTCV60TLM70T3G | Виробник : Microchip Technology |
 Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SP3 |
товар відсутній |
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| APTCV60TLM70T3G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB Pulsed drain current: 160A Power dissipation: 250W Technology: Field Stop; SJ-MOSFET; Trench Drain current: 29A Drain-source voltage: 600V Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET/IGBT transistor Semiconductor structure: diode/transistor Case: SP3 On-state resistance: 70mΩ Collector current: 50A Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase |
товар відсутній |