Технічний опис APTCV40H60CT1G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 27A; SP1; Press-in PCB; 250W, Type of module: MOSFET/IGBT transistor, Semiconductor structure: transistor/transistor, Topology: H-bridge; NTC thermistor, Collector current: 50A, Case: SP1, Electrical mounting: Press-in PCB, Power dissipation: 250W, Technology: CoolMOS™; Field Stop; SiC; Trench, Mechanical mounting: screw, Pulsed drain current: 115A, Drain-source voltage: 600V, Drain current: 27A, On-state resistance: 83mΩ, Gate-source voltage: ±20V, кількість в упаковці: 1 шт.
Інші пропозиції APTCV40H60CT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| APTCV40H60CT1G | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 600V; 27A; SP1; Press-in PCB; 250W Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Collector current: 50A Case: SP1 Electrical mounting: Press-in PCB Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Mechanical mounting: screw Pulsed drain current: 115A Drain-source voltage: 600V Drain current: 27A On-state resistance: 83mΩ Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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| APTCV40H60CT1G | Виробник : Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
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| APTCV40H60CT1G | Виробник : Microchip Technology |
IGBT Modules DOR CC8004 |
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| APTCV40H60CT1G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 27A; SP1; Press-in PCB; 250W Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Collector current: 50A Case: SP1 Electrical mounting: Press-in PCB Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Mechanical mounting: screw Pulsed drain current: 115A Drain-source voltage: 600V Drain current: 27A On-state resistance: 83mΩ Gate-source voltage: ±20V |
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