APTC60TAM21SCTPAG MICROCHIP (MICROSEMI)


index.php?option=com_docman&task=doc_download&gid=129731 Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 87A
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 400A
Power dissipation: 625W
Technology: CoolMOS™; SiC
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис APTC60TAM21SCTPAG MICROCHIP (MICROSEMI)

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W, Type of module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 600V, Drain current: 87A, Case: SP6P, Topology: MOSFET x3 half-bridge; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 21mΩ, Pulsed drain current: 400A, Power dissipation: 625W, Technology: CoolMOS™; SiC, Gate-source voltage: ±20V, Mechanical mounting: screw, кількість в упаковці: 1 шт.

Інші пропозиції APTC60TAM21SCTPAG

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APTC60TAM21SCTPAG Виробник : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=129731 Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 87A
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 400A
Power dissipation: 625W
Technology: CoolMOS™; SiC
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній