Технічний опис APTC60HM70BT3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A, Power dissipation: 250W, Case: SP3F, Semiconductor structure: diode/transistor, Drain-source voltage: 600V, Drain current: 29A, On-state resistance: 70mΩ, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: CoolMOS™, Gate-source voltage: ±20V, Topology: boost chopper; NTC thermistor, Pulsed drain current: 160A, кількість в упаковці: 1 шт.
Інші пропозиції APTC60HM70BT3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTC60HM70BT3G | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A Power dissipation: 250W Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 29A On-state resistance: 70mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™ Gate-source voltage: ±20V Topology: boost chopper; NTC thermistor Pulsed drain current: 160A кількість в упаковці: 1 шт |
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| APTC60HM70BT3G | Виробник : Microsemi Power Products Group |
Description: MOSFET 4N-CH 600V 39A SP3 |
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| APTC60HM70BT3G | Виробник : Microchip Technology |
Discrete Semiconductor Modules DOR CC3131 |
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| APTC60HM70BT3G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A Power dissipation: 250W Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 29A On-state resistance: 70mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™ Gate-source voltage: ±20V Topology: boost chopper; NTC thermistor Pulsed drain current: 160A |
товар відсутній |