Технічний опис APTC60DDAM70T1G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 600V; 29A; SP1; Press-in PCB; Idm: 160A, Case: SP1, On-state resistance: 70mΩ, Topology: boost chopper x2; NTC thermistor, Technology: CoolMOS™; SJ-MOSFET, Drain current: 29A, Power dissipation: 250W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Gate-source voltage: ±20V, Pulsed drain current: 160A, Semiconductor structure: diode/transistor, Drain-source voltage: 600V, кількість в упаковці: 1 шт.
Інші пропозиції APTC60DDAM70T1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTC60DDAM70T1G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 600V; 29A; SP1; Press-in PCB; Idm: 160A Case: SP1 On-state resistance: 70mΩ Topology: boost chopper x2; NTC thermistor Technology: CoolMOS™; SJ-MOSFET Drain current: 29A Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±20V Pulsed drain current: 160A Semiconductor structure: diode/transistor Drain-source voltage: 600V кількість в упаковці: 1 шт |
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APTC60DDAM70T1G | Виробник : Microsemi Power Products Group |
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APTC60DDAM70T1G | Виробник : Microchip Technology |
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товар відсутній |
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APTC60DDAM70T1G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 600V; 29A; SP1; Press-in PCB; Idm: 160A Case: SP1 On-state resistance: 70mΩ Topology: boost chopper x2; NTC thermistor Technology: CoolMOS™; SJ-MOSFET Drain current: 29A Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±20V Pulsed drain current: 160A Semiconductor structure: diode/transistor Drain-source voltage: 600V |
товар відсутній |