Технічний опис APTC60DDAM24T3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 600V; 70A; SP3; Press-in PCB; Idm: 260A, Case: SP3, On-state resistance: 24mΩ, Topology: boost chopper x2; NTC thermistor, Technology: SJ-MOSFET, Drain current: 70A, Power dissipation: 462W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Gate-source voltage: ±20V, Pulsed drain current: 260A, Semiconductor structure: diode/transistor, Drain-source voltage: 600V, кількість в упаковці: 1 шт.
Інші пропозиції APTC60DDAM24T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTC60DDAM24T3G | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 600V; 70A; SP3; Press-in PCB; Idm: 260A Case: SP3 On-state resistance: 24mΩ Topology: boost chopper x2; NTC thermistor Technology: SJ-MOSFET Drain current: 70A Power dissipation: 462W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±20V Pulsed drain current: 260A Semiconductor structure: diode/transistor Drain-source voltage: 600V кількість в упаковці: 1 шт |
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| APTC60DDAM24T3G | Виробник : Microsemi Power Products Group |
Description: MOSFET 2N-CH 600V 95A SP3 |
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| APTC60DDAM24T3G | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SP3 |
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| APTC60DDAM24T3G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3; Press-in PCB; Idm: 260A Case: SP3 On-state resistance: 24mΩ Topology: boost chopper x2; NTC thermistor Technology: SJ-MOSFET Drain current: 70A Power dissipation: 462W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±20V Pulsed drain current: 260A Semiconductor structure: diode/transistor Drain-source voltage: 600V |
товар відсутній |