APT8024LFLLG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264
Case: TO264
Mounting: THT
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 160nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 124A
Drain-source voltage: 800V
Drain current: 31A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264
Case: TO264
Mounting: THT
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 160nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 124A
Drain-source voltage: 800V
Drain current: 31A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
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Технічний опис APT8024LFLLG MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 800V 31A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 15.5A, 10V, Power Dissipation (Max): 565W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-264 [L], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V.
Інші пропозиції APT8024LFLLG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT8024LFLLG | Виробник : Microchip Technology |
Description: MOSFET N-CH 800V 31A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 15.5A, 10V Power Dissipation (Max): 565W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V |
товару немає в наявності |
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APT8024LFLLG | Виробник : Microchip / Microsemi | MOSFET FG, FREDFET, 800V, TO-264, RoHS |
товару немає в наявності |
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APT8024LFLLG | Виробник : Microchip Technology | MOSFET FG, FREDFET, 800V, TO-264, RoHS |
товару немає в наявності |
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APT8024LFLLG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264 Case: TO264 Mounting: THT Power dissipation: 565W Polarisation: unipolar Gate charge: 160nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 124A Drain-source voltage: 800V Drain current: 31A On-state resistance: 0.26Ω Type of transistor: N-MOSFET |
товару немає в наявності |