Технічний опис APT8024JFLL Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W, Case: ISOTOP, Power dissipation: 460W, Polarisation: unipolar, Electrical mounting: screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: POWER MOS 7®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 116A, Semiconductor structure: single transistor, Drain-source voltage: 800V, Drain current: 29A, On-state resistance: 0.26Ω, кількість в упаковці: 1 шт.
Інші пропозиції APT8024JFLL
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT8024JFLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W Case: ISOTOP Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.26Ω кількість в упаковці: 1 шт |
товар відсутній |
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APT8024JFLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W Case: ISOTOP Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.26Ω |
товар відсутній |