Технічний опис APT8014L2LLG Microchip Technology
Description: MOSFET N-CH 800V 52A 264 MAX, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 26A, 10V, Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: 264 MAX™ [L2], Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V.
Інші пропозиції APT8014L2LLG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT8014L2LLG | Виробник : Microchip Technology |
 Trans MOSFET N-CH 800V 52A 3-Pin(3+Tab) TO-264 MAX Tube |
товару немає в наявності |
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| APT8014L2LLG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 800V Drain current: 52A Pulsed drain current: 208A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 285nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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APT8014L2LLG | Виробник : Microchip Technology |
Description: MOSFET N-CH 800V 52A 264 MAX Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: 264 MAX™ [L2] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V |
товару немає в наявності |
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APT8014L2LLG | Виробник : Microchip Technology |
MOSFETs MOSFET MOS7 800 V 14 Ohm TO-264 MAX |
товару немає в наявності |
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| APT8014L2LLG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 800V Drain current: 52A Pulsed drain current: 208A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 285nC Kind of channel: enhanced |
товару немає в наявності |