Технічний опис APT7M120S Microsemi
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK, Mounting: SMD, Case: D3PAK, Technology: POWER MOS 8®, Gate charge: 80nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 28A, Drain-source voltage: 1.2kV, Drain current: 5A, On-state resistance: 2.1Ω, Type of transistor: N-MOSFET, Power dissipation: 335W, Polarisation: unipolar, кількість в упаковці: 1 шт.
Інші пропозиції APT7M120S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
APT7M120S | Виробник : MICROCHIP (MICROSEMI) |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK Mounting: SMD Case: D3PAK Technology: POWER MOS 8® Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 28A Drain-source voltage: 1.2kV Drain current: 5A On-state resistance: 2.1Ω Type of transistor: N-MOSFET Power dissipation: 335W Polarisation: unipolar кількість в упаковці: 1 шт |
товару немає в наявності |
|
 |
APT7M120S | Виробник : Microsemi Corporation |
Description: MOSFET N-CH 1200V 8A D3PAK |
товару немає в наявності |
|
|
|
APT7M120S | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK Mounting: SMD Case: D3PAK Technology: POWER MOS 8® Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 28A Drain-source voltage: 1.2kV Drain current: 5A On-state resistance: 2.1Ω Type of transistor: N-MOSFET Power dissipation: 335W Polarisation: unipolar |
товару немає в наявності |