APT4020BVFRG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A
Mounting: THT
Case: TO247-3
On-state resistance: 0.2Ω
Pulsed drain current: 92A
Drain-source voltage: 400V
Drain current: 23A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 0.12µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A
Mounting: THT
Case: TO247-3
On-state resistance: 0.2Ω
Pulsed drain current: 92A
Drain-source voltage: 400V
Drain current: 23A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 0.12µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
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Технічний опис APT4020BVFRG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A, Mounting: THT, Case: TO247-3, On-state resistance: 0.2Ω, Pulsed drain current: 92A, Drain-source voltage: 400V, Drain current: 23A, Type of transistor: N-MOSFET, Power dissipation: 250W, Polarisation: unipolar, Gate charge: 0.12µC, Technology: POWER MOS 5®, Kind of channel: enhanced, Gate-source voltage: ±30V, кількість в упаковці: 1 шт.
Інші пропозиції APT4020BVFRG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APT4020BVFRG | Виробник : Microchip / Microsemi | MOSFET FG, FREDFET, 400V, TO-247, RoHS |
товар відсутній |
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APT4020BVFRG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A Mounting: THT Case: TO247-3 On-state resistance: 0.2Ω Pulsed drain current: 92A Drain-source voltage: 400V Drain current: 23A Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Gate charge: 0.12µC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V |
товар відсутній |