Технічний опис APT39F60J Microsemi
Category: Transistor modules MOSFET, Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W, Mechanical mounting: screw, Gate-source voltage: ±30V, Pulsed drain current: 210A, Case: ISOTOP, Semiconductor structure: single transistor, Drain-source voltage: 600V, Drain current: 26A, On-state resistance: 0.11Ω, Power dissipation: 480W, Polarisation: unipolar, Electrical mounting: screw, Type of module: MOSFET transistor, Technology: POWER MOS 8®, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції APT39F60J
Фото | Назва | Виробник | Інформація |
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APT39F60J | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 210A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 26A On-state resistance: 0.11Ω Power dissipation: 480W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT39F60J | Виробник : Microchip Technology |
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APT39F60J | Виробник : Microsemi Power Products Group |
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APT39F60J | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 210A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 26A On-state resistance: 0.11Ω Power dissipation: 480W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
товар відсутній |