APT36GA60SD15 Microchip Technology / Atmel
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 650.26 грн |
| 10+ | 640.16 грн |
| 100+ | 510.98 грн |
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Технічний опис APT36GA60SD15 Microchip Technology / Atmel
Description: IGBT PT 600V 65A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 19 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: D3Pak, IGBT Type: PT, Td (on/off) @ 25°C: 16ns/122ns, Switching Energy: 307µJ (on), 254µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 102 nC, Current - Collector (Ic) (Max): 65 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 109 A, Power - Max: 290 W.
Інші пропозиції APT36GA60SD15
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APT36GA60SD15 | Виробник : MICROCHIP (MICROSEMI) |
 APT36GA60SD15 SMD IGBT transistors |
товар відсутній |
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APT36GA60SD15 | Виробник : Microchip Technology |
Description: IGBT PT 600V 65A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 19 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: D3Pak IGBT Type: PT Td (on/off) @ 25°C: 16ns/122ns Switching Energy: 307µJ (on), 254µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 102 nC Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 109 A Power - Max: 290 W |
товар відсутній |