Технічний опис APT24M80B Microsemi
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 16A; Idm: 85A; 625W; TO247-3, Mounting: THT, Case: TO247-3, Polarisation: unipolar, Kind of channel: enhanced, Technology: POWER MOS 8®, Power dissipation: 625W, Pulsed drain current: 85A, Gate-source voltage: ±30V, Type of transistor: N-MOSFET, Drain-source voltage: 800V, Drain current: 16A, On-state resistance: 390mΩ, Gate charge: 150nC.
Інші пропозиції APT24M80B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
APT24M80B | Виробник : MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 16A; Idm: 85A; 625W; TO247-3 Mounting: THT Case: TO247-3 Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 8® Power dissipation: 625W Pulsed drain current: 85A Gate-source voltage: ±30V Type of transistor: N-MOSFET Drain-source voltage: 800V Drain current: 16A On-state resistance: 390mΩ Gate charge: 150nC |
товар відсутній |
|
 |
APT24M80B | Виробник : Microsemi Power Products Group |
Description: MOSFET N-CH 800V 25A TO-247 |
товар відсутній |
|
|
|
APT24M80B | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 16A; Idm: 85A; 625W; TO247-3 Mounting: THT Case: TO247-3 Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 8® Power dissipation: 625W Pulsed drain current: 85A Gate-source voltage: ±30V Type of transistor: N-MOSFET Drain-source voltage: 800V Drain current: 16A On-state resistance: 390mΩ Gate charge: 150nC |
товар відсутній |