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APT1001R6BFLLG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3
Mounting: THT
Case: TO247-3
Technology: POWER MOS 7®
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 8A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 266W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3
Mounting: THT
Case: TO247-3
Technology: POWER MOS 7®
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 8A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 266W
Polarisation: unipolar
кількість в упаковці: 1 шт
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Технічний опис APT1001R6BFLLG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3, Mounting: THT, Case: TO247-3, Technology: POWER MOS 7®, Gate charge: 55nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 32A, Drain-source voltage: 1kV, Drain current: 8A, On-state resistance: 1.6Ω, Type of transistor: N-MOSFET, Power dissipation: 266W, Polarisation: unipolar, кількість в упаковці: 1 шт.
Інші пропозиції APT1001R6BFLLG
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APT1001R6BFLLG | Виробник : Microchip Technology |
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товар відсутній |
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APT1001R6BFLLG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 55nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Drain-source voltage: 1kV Drain current: 8A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Power dissipation: 266W Polarisation: unipolar |
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