AOY2610E ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36.5A
Power dissipation: 23.5W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 14.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36.5A
Power dissipation: 23.5W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 14.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 2378 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
8+ | 56.89 грн |
11+ | 35.7 грн |
25+ | 31.55 грн |
33+ | 26.42 грн |
91+ | 24.91 грн |
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Технічний опис AOY2610E ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CHANNEL 60V 19A TO251B, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V, Power Dissipation (Max): 59.5W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-251B, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V.
Інші пропозиції AOY2610E за ціною від 29.89 грн до 68.27 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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AOY2610E | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36.5A Power dissipation: 23.5W Case: TO251 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: THT Gate charge: 14.5nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 2378 шт: термін постачання 14-21 дні (днів) |
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AOY2610E Код товару: 198546 |
Транзистори > Польові N-канальні |
товар відсутній
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AOY2610E | Виробник : Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 46A 3-Pin(3+Tab) TO-251B Tube |
товар відсутній |
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AOY2610E | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHANNEL 60V 19A TO251B Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 59.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-251B Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
товар відсутній |