AOU3N60

AOU3N60 Alpha & Omega Semiconductor


aod3n60.pdf Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 2.5A 3-Pin(3+Tab) TO-251
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Технічний опис AOU3N60 Alpha & Omega Semiconductor

Description: MOSFET N-CH 600V 2.5A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.25A, 10V, Power Dissipation (Max): 56.8W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-251-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V.

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AOU3N60 AOU3N60 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOU3N60-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 9.9nC
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товару немає в наявності
AOU3N60 AOU3N60 Виробник : Alpha & Omega Semiconductor Inc. TO251.pdf Description: MOSFET N-CH 600V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
товару немає в наявності
AOU3N60 AOU3N60 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOU3N60-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 9.9nC
Kind of channel: enhanced
товару немає в наявності