Технічний опис AOU3N60 Alpha & Omega Semiconductor
Description: MOSFET N-CH 600V 2.5A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.25A, 10V, Power Dissipation (Max): 56.8W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-251-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V.
Інші пропозиції AOU3N60
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AOU3N60 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.6A Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 9.9nC Kind of channel: enhanced кількість в упаковці: 4000 шт |
товару немає в наявності |
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AOU3N60 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 2.5A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.25A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V |
товару немає в наявності |
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AOU3N60 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.6A Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 9.9nC Kind of channel: enhanced |
товару немає в наявності |