AOTF20B65M1 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 18W; TO220F; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector current: 20A
Case: TO220F
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Turn-on time: 51ns
Turn-off time: 166ns
Collector-emitter voltage: 650V
Power dissipation: 18W
Kind of package: tube
Collector-emitter saturation voltage: 1.7V
Gate charge: 46nC
Turn-on switching energy: 0.47mJ
Turn-off switching energy: 0.27mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 18W; TO220F; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector current: 20A
Case: TO220F
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Turn-on time: 51ns
Turn-off time: 166ns
Collector-emitter voltage: 650V
Power dissipation: 18W
Kind of package: tube
Collector-emitter saturation voltage: 1.7V
Gate charge: 46nC
Turn-on switching energy: 0.47mJ
Turn-off switching energy: 0.27mJ
на замовлення 652 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 151.38 грн |
5+ | 125.93 грн |
8+ | 106.89 грн |
22+ | 101.04 грн |
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Технічний опис AOTF20B65M1 ALPHA & OMEGA SEMICONDUCTOR
Description: IGBT 650V 20A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 322 ns, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 26ns/122ns, Switching Energy: 470µJ (on), 270µJ (off), Test Condition: 400V, 20A, 15Ohm, 15V, Gate Charge: 46 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 45 W.
Інші пропозиції AOTF20B65M1 за ціною від 112.83 грн до 210.6 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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AOTF20B65M1 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 18W; TO220F; Eoff: 0.27mJ; Eon: 0.47mJ Type of transistor: IGBT Collector current: 20A Case: TO220F Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 60A Turn-on time: 51ns Turn-off time: 166ns Collector-emitter voltage: 650V Power dissipation: 18W Kind of package: tube Collector-emitter saturation voltage: 1.7V Gate charge: 46nC Turn-on switching energy: 0.47mJ Turn-off switching energy: 0.27mJ кількість в упаковці: 1 шт |
на замовлення 652 шт: термін постачання 14-21 дні (днів) |
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AOTF20B65M1 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 322 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 26ns/122ns Switching Energy: 470µJ (on), 270µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 45 W |
на замовлення 579 шт: термін постачання 21-31 дні (днів) |
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AOTF20B65M1 | Виробник : Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 40A 45000mW 3-Pin(3+Tab) TO-220F Tube |
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