AOTF190A60L Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
Description: MOSFET N-CH 600V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
на замовлення 496 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 191.6 грн |
50+ | 146.03 грн |
100+ | 125.16 грн |
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Технічний опис AOTF190A60L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 20A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 250µA, Supplier Device Package: TO-220F, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V.
Інші пропозиції AOTF190A60L
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AOTF190A60L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; TO220F Case: TO220F Mounting: THT Drain current: 12A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 600V кількість в упаковці: 1 шт |
товар відсутній |
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AOTF190A60L | Виробник : Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220F Tube |
товар відсутній |
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AOTF190A60L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; TO220F Case: TO220F Mounting: THT Drain current: 12A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 600V |
товар відсутній |