AOTF10B60D2 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 12W; TO220F; Eoff: 0.04mJ; Eon: 0.14mJ
Type of transistor: IGBT
Collector current: 10A
Case: TO220F
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Turn-on time: 26ns
Turn-off time: 124ns
Collector-emitter voltage: 600V
Power dissipation: 12W
Kind of package: tube
Collector-emitter saturation voltage: 1.55V
Gate charge: 9.4nC
Turn-on switching energy: 0.14mJ
Turn-off switching energy: 0.04mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 12W; TO220F; Eoff: 0.04mJ; Eon: 0.14mJ
Type of transistor: IGBT
Collector current: 10A
Case: TO220F
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Turn-on time: 26ns
Turn-off time: 124ns
Collector-emitter voltage: 600V
Power dissipation: 12W
Kind of package: tube
Collector-emitter saturation voltage: 1.55V
Gate charge: 9.4nC
Turn-on switching energy: 0.14mJ
Turn-off switching energy: 0.04mJ
на замовлення 306 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 82.79 грн |
6+ | 69.55 грн |
16+ | 57.11 грн |
42+ | 53.45 грн |
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Технічний опис AOTF10B60D2 ALPHA & OMEGA SEMICONDUCTOR
Description: IGBT 600V 10A TO-220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 98 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A, Supplier Device Package: TO-220F, Td (on/off) @ 25°C: 12ns/83ns, Switching Energy: 140µJ (on), 40µJ (off), Test Condition: 400V, 5A, 60Ohm, 15V, Gate Charge: 9.4 nC, Part Status: Active, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 31.2 W.
Інші пропозиції AOTF10B60D2 за ціною від 61.5 грн до 99.35 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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AOTF10B60D2 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 12W; TO220F; Eoff: 0.04mJ; Eon: 0.14mJ Type of transistor: IGBT Collector current: 10A Case: TO220F Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 20A Turn-on time: 26ns Turn-off time: 124ns Collector-emitter voltage: 600V Power dissipation: 12W Kind of package: tube Collector-emitter saturation voltage: 1.55V Gate charge: 9.4nC Turn-on switching energy: 0.14mJ Turn-off switching energy: 0.04mJ кількість в упаковці: 1 шт |
на замовлення 306 шт: термін постачання 14-21 дні (днів) |
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AOTF10B60D2 | Виробник : Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 23A 31200mW 3-Pin(3+Tab) TO-220F T/R |
товар відсутній |
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AOTF10B60D2 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 10A TO-220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 98 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A Supplier Device Package: TO-220F Td (on/off) @ 25°C: 12ns/83ns Switching Energy: 140µJ (on), 40µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 9.4 nC Part Status: Active Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 31.2 W |
товар відсутній |